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Thermal scanning probe lithography : ウィキペディア英語版
Thermal scanning probe lithography

Thermal scanning probe lithography (t-SPL) is a form of scanning probe lithography (SPL) whereby material is structured on the nanoscale using scanning probes, primarily through the application of thermal energy.
Related fields are ''thermo-mechanical'' ''SPL'' (see also Millipede memory), ''thermochemical'' ''SPL'' (or thermochemical nanolithography) where the goal is to influence the local chemistry, and ''thermal'' Dip Pen Lithography as an additive technique.
==History==

Scientists around Daniel Rugar and John Mamin at the IBM research laboratories in Almaden have been the pioneers in using heated AFM (atomic force microscope) probes for the modification of surfaces. In 1992, they used microsecond laser pulses to heat AFM tips to write indents as small as 150 nm into the polymer PMMA at rates of 100 kHz. In the following years, they developed cantilevers with resonance frequencies above 4 MHz and integrated resistive heaters and piezoresistive sensors for writing and reading of data. This thermo-mechanical data storage concept formed the basis of the Millipede project which was initialized by Peter Vettiger and Gerd Binnig at the IBM Research laboratories Zurich in 1995. It was an example of a memory storage device with a large array of parallel probes, which was however never commercialized due to growing competition from non-volatile memory such as flash memory. The storage medium of the Millipede memory consisted of polymers with shape memory functionality, like e.g. cross-linked polystyrene, in order to allow to write data indents by plastic deformation and erasing of the data again by heating. However, evaporation instead of plastic deformation was necessary for nanolithography applications to be able to create any pattern in the resist. Such local evaporation of resist induced by a heated tip could achieved for several materials like Pentaerythritol tetranitrate, cross-linked polycarbonates, and Diels-Alder polymers. Significant progress in the choice of resist material was made in 2010 at IBM Research in Zurich, leading to high resolution and precise 3D-relief patterning〔 with the use of the self-amplified depolymerization polymer polyphthalaldehyde (PPA) and molecular glasses as resist, where the polymer decomposes into volatile monomers upon heating with the tip without the application of mechanical force and without pile-up or residues of the resist.

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